Tootfinder

Non-Ferroelectric to Ferroelectric Phase Transition in epitaxial Y:HfO$_2$ via Rapid Thermal Annealing Induced Nitrogen Doping
Soumyajyoti Mondal, Asraful Haque, Binoy Krishna De, Shubham Kumar Parate, Pramod Kumar Yadav, Arup Basak, Kaushal Tiwari, Bhagwati Prasad, Pavan Nukala
https://arxiv.org/abs/2509.02229

Non-Ferroelectric to Ferroelectric Phase Transition in epitaxial Y:HfO$_2$ via Rapid Thermal Annealing Induced Nitrogen Doping
Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO$_2$, with cationic doping widely employed to introduce such defects. In contrast, systematic studies on anionic doping to induce ferroelectricity remain largely in nascent stages. On epitaxial Y:HfO$_2$ grown on ITO buffered YSZ substrates that crystallize in a mixed monoclinic (non-polar) and orthorhombic (polar) phases, we introduce nitrogen doping via post deposition rapid thermal annealing (RTA)…