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Cyclic sieving phenomena via combinatorics of continued fractions
Bishal Deb
https://arxiv.org/abs/2508.13709 https://arxiv.org/pdf/2508.13709

Cyclic sieving phenomena via combinatorics of continued fractions
We will exhibit several instances of the cyclic sieving phenomenon involving statistics and involutions on the following combinatorial families of objects: permutations, set partitions, perfect matchings, D-permutations (and its subclasses). Our results will be based on continued fraction identities enumerating these objects. Our instances of cyclic sieving phenomenon for permutations involve the Corteel involution; this was first studied by Adams, Elder, Lafrenière, McNicholas, Striker and We…

Origin of persistent photoconductivity in surface conducting hydrogenated diamond films
N. Mohasin Sulthana, K. Ganesan, P. K. Ajikumar
https://arxiv.org/abs/2507.06559

Origin of persistent photoconductivity in surface conducting hydrogenated diamond films
The p-type surface conductivity of hydrogen-terminated diamond (HD) has opened up new possibilities for the development of diamond-based electronic devices. However, the origin of the persistent photoconductivity (PPC) observed in surface-conducting HD remains unclear, an understanding that is crucial for advancing HD-based optoelectronic technologies. In this study, we investigate the underlying mechanism of PPC in surface-conducting HD films. A systematic analysis was performed by tuning the …

Millisecond-scale Volatile Memory in HZO Ferroelectric Capacitors for Bio-inspired Temporal Computing
Luca Fehlings, Thomas Mikolajick, Beatriz Noheda, Erika Covi
https://arxiv.org/abs/2508.08973

Millisecond-scale Volatile Memory in HZO Ferroelectric Capacitors for Bio-inspired Temporal Computing
With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the retention of these devices provides an excellent opportunity for device optimization both towards non-volatile memory applications and towards real-time signal processing applications in which controlled time constants are of paramount importance. Indeed, we argu…

https://www.justice.gov/usao-ndca/pr/romanian-national-pleads-guilty-bank-fraud-involving-over-500000-ebt-funds-illegal
Marian obtained EBT cards numbers by using skimmer devices on ATM and point of sale mac…

Romanian National Pleads Guilty To Bank Fraud Involving Over $500,000 In EBT Funds, Illegal Reentry, And Asylum Fraud
OAKLAND – Marius Marian pleaded guilty in federal court today to fraudulently obtaining over $500,000 in Electronic Benefits Transfer (EBT) funds, illegally reentering the United States following an aggravated felony conviction, and making false statements on his asylum application

Direct laser ablation of 2D material films for fabricating multi-functional flexible and transparent devices
Yigit Sozen, Yu Kyoung Ryu, Javier Martinez, Andres Castellanos-Gomez
https://arxiv.org/abs/2506.03730

Direct laser ablation of 2D material films for fabricating multi-functional flexible and transparent devices
We present a scalable method for direct patterning of graphite and transition metal dichalcogenide (TMD) films on polycarbonate (PC) and other transparent substrates using fiber laser ablation. This process facilitates the fabrication of various functional devices, including strain gauges, supercapacitors, and photodetector arrays, without the need for photolithography or solvents, thereby simplifying device production and enhancing environmental sustainability. Utilizing roll-to-roll mechanica…

Influence of oxygen-defects on intraband terahertz conductivity of carbon nanotubes
Maksim Paukov, Shuang Sun, Dmitry Krasnikov, Arina Radivon, Gennady Komandin, Andrey Vyshnevyy, Emil Chiglintsev, Stanislav Colar, Kirill Brekhov, Kirill Zaytsev, Sergei Garnov, Nadzeya Valynets, Albert Nasibulin, Aleksey Arsenin, Valentyn Volkov, Alexander Chernov, Yan Zhang, Maria Burdanova

Influence of oxygen-defects on intraband terahertz conductivity of carbon nanotubes
The exceptional charge transport properties of single-walled carbon nanotubes (SWCNTs) enable numerous ultrafast optoelectronic applications. Modifying SWCNTs by introducing defects significantly impacts the performance of nanotube-based devices, making defect characterization crucial. This research tracked these effects in oxygen plasma-treated SWCNT thin films. Sub-picosecond electric fields of varying strengths and additional photoexcitation were used to assess how defects influence charge c…

Step-directed Epitaxy of Uni-directional Hexagonal Boron Nitride on Vicinal Ge(110)
Ju-Hyun Jung, Chao Zhao, Seong-Jun Yang, Jun-Ho Park, Woo-Ju Lee, Su-Beom Song, Jonghwan Kim, Chan-Cuk Hwang, Seung-Hwa Baek, Feng Ding, Cheol-Joo Kim
https://arxiv.org/abs/2507.18985

Step-directed Epitaxy of Uni-directional Hexagonal Boron Nitride on Vicinal Ge(110)
Insulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices. To achieve this, high-quality hBN with controlled atomic configurations must be able to form pristine interfaces with various materials in devices. However, previously reported large-scale hBN films with uniform thickness either are polycrystalline or are not suitable for atomically clean assembly via mechanical exfoliation, lim…