Tootfinder

Enhanced Breakdown Voltage in $\beta$-Ga$_2$O$_3$ Schottky Barrier Diodes via Fast Neutron Irradiation and Electrothermal Annealing
Saleh Ahmed Khan, Sudipto Saha, Ahmed Ibreljic, Stephen Margiotta, Jiawei Liu, Walid Amir, Surajit Chakraborty, Uttam Singisetti, A F M Anhar Uddin Bhuiyan
https://arxiv.org/abs/2510.06415

Enhanced Breakdown Voltage in $β$-Ga$_2$O$_3$ Schottky Barrier Diodes via Fast Neutron Irradiation and Electrothermal Annealing
This study investigates the impact of fast neutron irradiation and post-radiation electro-thermal annealing on the electrical performance of $β$-Ga$_2$O$_3$ Schottky barrier diodes. Devices irradiated with 1 MeV neutrons at a high fluence of 1E15 n/cm^2 exhibited substantial degradation, including a drastic reduction in on-current and an increase in on-resistance. Electrothermal testing, conducted through simultaneous current-voltage (J-V) measurements and thermal annealing, resulted in signif…

Superconducting Nanowire Single Photon Detectors based on NbRe nitride ultrafilms
F. Avitabile, F. Colangelo, M. Yu. Mikhailov, Z. Makhdoumi Kakhaki, A. Kumar, I. Esmaeil Zadeh, C. Attanasio, C. Cirillo
https://arxiv.org/abs/2510.05910

Superconducting Nanowire Single Photon Detectors based on NbRe nitride ultrafilms
The influence of the reactive DC sputtering parameters on the superconducting properties of NbReN ultrathin films was investigated. A detailed study of the current-voltage characteristics of the plasma was performed to optimize the superconducting critical temperature, Tc. The thickness dependence of Tc for the films deposited under different conditions was analyzed down to the ultrathin limit. Optimized films were used to fabricate superconducting nanowire single photon detectors which, at T=3…

Marquez Valdes-Scantling signing with Steelers, reuniting with Aaron Rodgers after 49ers stint, per report

https://www.cbssports.com/nfl/news/marquez-valdes-scantling-steelers-…

Rapid heat assisted polarization reversal in ferroelectric thin films
Rekikua Alemayehu, Steffen Zeuschner, Alexander von Reppert, Matthias Roessle, Marin Alexe, Matias Bargheer
https://arxiv.org/abs/2508.21612

Rapid heat assisted polarization reversal in ferroelectric thin films
We demonstrate that switching of ferroelectric thin-films sandwiched between metallic electrodes can be controlled by laser-assisted heating, reminiscent of heat-assisted magnetic recording. We employ electrical switching cycles that quantify the electrically switchable remanent polarization $P_\mathrm{r}$ and show that 300\,ns voltage pulses alone change the polarization by less than $ΔP

Absence of skewness in the voltage fluctuations of a tunnel junction in the quantum regime
Clovis Farley, Bertrand Reulet
https://arxiv.org/abs/2509.15352 https://

Absence of skewness in the voltage fluctuations of a tunnel junction in the quantum regime
Current fluctuations in a tunnel junction have a remarkable property: On the one hand, their variance corresponds to vacuum fluctuations at low voltage bias $V$, when the electron energy $eV$ is smaller than the photon detection energy $hf$ . On the other hand, their skewness, i.e. their third moment, is frequency independent, equal to $e^2I$ as if electron transport were simply Poissonian. We address the following question: Could it be that at low voltage, the vacuum fluctuations generated by …

A profile of Polymarket CEO Shayne Coplan, whose estimated 11% stake is now worth $1B following ICE's $2B investment, as its rivalry with Kalshi intensifies (Forbes)
https://www.forbes.com/sites/aliciap…

Crypto’s Fastest-Growing Startup Mints World’s Youngest Self-Made Billionaire
A $2 billion investment from NYSE parent ICE vaults Polymarket’s 27 year-old founder Shayne Coplan into the three-comma club and intensifies its rivalry with prediction market competitor Kalshi.

Understanding the Geometry of Faulted Power Systems under High Penetration of Inverter-Based Resources via Ellipse Fitting and Geometric Algebra
Jorge Ventura, Jaroslav Hrdina, Ale\v{s} N\'avrat, Marek Stodola, Ahmad Eid, Santiago Sanchez-Acevedo, Francisco G. Montoya
https://arxiv.org/abs/2509.10044

Understanding the Geometry of Faulted Power Systems under High Penetration of Inverter-Based Resources via Ellipse Fitting and Geometric Algebra
Power systems with high penetration of inverter-based resources (IBR) present significant challenges for conventional protection schemes, with traditional distance protection methods failing to detect line-to-line faults during asymmetric conditions. This paper presents a methodology for electrical fault detection and classification using ellipse fitting and geometric algebra applied to voltage and current space curves. The approach characterizes electrical faults by fitting ellipses to voltage…

Radiation damage study of Belle II silicon strip sensors with 90 MeV electron irradiation
K. Adamczyk (Belle II SVD Collaboration), H. Aihara (Belle II SVD Collaboration), K. Amos (Belle II SVD Collaboration), S. Bacher (Belle II SVD Collaboration), S. Bahinipati (Belle II SVD Collaboration), J. Baudot (Belle II SVD Collaboration), P. K. Behera (Belle II SVD Collaboration), S. Bettarini (Belle II SVD Collaboration), L. Bosisio (Belle II SVD Collaboration), A. Bozek (Belle II SVD Collab…

Radiation damage study of Belle II silicon strip sensors with 90 MeV electron irradiation
The silicon strip sensors of the Belle II silicon vertex detector were irradiated with 90 MeV electron beams up to an equivalent 1-MeV-neutron fluence of $3.0\times 10^{13}~{\rm n}_{\rm eq}/{\rm cm^2}$. We measure changes in sensor properties induced by radiation damage in the semiconductor bulk. Electrons around this energy are a major source of beam-induced background during Belle II operation. We discuss observed changes in full depletion voltage, sensor leakage current, noise, and charge co…

Conductance Plateaus at Quantum Hall Integer Filling Factors in Germanium Quantum Point Contacts
Karina Hudson, Davide Costa, Davide Degli Esposti, Lucas E. A. Stehouwer, Giordano Scappucci
https://arxiv.org/abs/2510.12554

Conductance Plateaus at Quantum Hall Integer Filling Factors in Germanium Quantum Point Contacts
Constricting transport through a one-dimensional quantum point contact in the quantum Hall regime enables gate-tunable selection of the edge modes propagating between voltage probe electrodes. Here we investigate the quantum Hall effect in a quantum point contact fabricated on low disorder strained germanium quantum wells. For increasing magnetic field, we observe Zeeman spin-split 1D ballistic hole transport evolving to integer quantum Hall states, with well-defined quantised conductance incre…