Tootfinder

What in the flying fuck are these fucking fartwaffles on.
If you don’t want social consequences then don’t be a fucking asshole.
The constitution or “waaa tolerance includes Nazis” doesn’t protect you from finding out when you fuck around.

Role of stress/strain in tailoring the magnetic and transport properties of magnetic thin films and multilayers
Arun Singh Dev, Dileep Kumar
https://arxiv.org/abs/2405.00049

Role of stress/strain in tailoring the magnetic and transport properties of magnetic thin films and multilayers
Magnetic anisotropy is a fundamental property of magnetic materials that determines the alignment of the spins along the preferential direction, called the easy axis of magnetization. Magnetic polycrystalline thin films offer several advantages over magnetic epitaxial thin films because of fabrication flexibility, higher coercivity and improved magnetic stability, higher magnetoresistance (useful in magneto-resistive devices such as magnetic field sensors and MRAM cells), cost-effectiveness and…

Tailoring wetting properties of organic hole-transport interlayers for slot-die coated perovskite solar modules
T. S. Le, I. A. Chuykoa, L. O. Luchnikova, K. A. Ilicheva, P. O. Sukhorukova, D. O. Balakirev, N. S. Saratovsky, A. O. Alekseev, S. S. Kozlov, D. S. Muratov, V. V. Voronov, P. A. Gostishchev, D. A. Kiselev, T. S. Ilina, A. A. Vasilev, A. Y. Polyakov, E. A. Svidchenko, O. A. Maloshitskaya, Yu. N. Luponosov, D. S. Saranin

Tailoring wetting properties of organic hole-transport interlayers for slot-die coated perovskite solar modules
The use of self-assembled monolayers (SAMs) with anchoring groups was considered as an effective approach for interface engineering in perovskite solar cells with metal oxide charge transporting layers. However, the coating of SAM layers in PSMs by means of a slot-die is a challenging process due to the low viscosity of the solutions and the low wettability of the films. In this study, we integrate a triphenylamine-based polymer, pTPA-TDP, blended with SAM based on 5-[4-[4-(diphenylamino) pheny…

Impact of Neutron Irradiation on LGADs with a Carbon-Enriched Shallow Multiplication Layer: Degradation of Timing Performance and Gain
E. Navarrete Ramos, J. Duarte-Campderros, M. Fern\'andez, G. G\'omez, J. Gonz\'alez, S. Hidalgo, R. Jaramillo, P. Mart\'inez Ruiz del \'Arbol, M. Moll, C. Quintana, A. K. Sikdar, I. Vila, J. Villegas

Impact of Neutron Irradiation on LGADs with a Carbon-Enriched Shallow Multiplication Layer: Degradation of Timing Performance and Gain
In this radiation tolerance study, Low Gain Avalanche Detectors (LGADs) with a carbon-enriched broad and shallow multiplication layer were examined in comparison to identical non-carbonated LGADs. Manufactured at IMB-CNM, the sensors underwent neutron irradiation at the TRIGA reactor in Ljubljana, reaching a fluence of $1.5e^{15} {n_{eq}} cm^{-2}$. The results revealed a smaller deactivation of boron and improved resistance to radiation in carbonated LGADs. The study demonstrated the potential …

Prioritized-MVBA: A New Approach to Design an Optimal Asynchronous Byzantine Agreement Protocol
Nasit S Sony, Xianzhong Ding, Mukesh Singhal
https://arxiv.org/abs/2406.03739

Prioritized-MVBA: A New Approach to Design an Optimal Asynchronous Byzantine Agreement Protocol
The multi-valued byzantine agreement protocol (MVBA) in the authenticated setting has been widely used as a core to design atomic broadcast and fault-tolerant state machine replication protocols in asynchronous networks. Originating from the seminal work of Cachin et al. \cite{CACHIN01}, subsequent research endeavors have sought to optimize protocol efficiency in terms of communication complexity. Notable advancements following Cachin's contributions include: i) VABA \cite{BYZ17}, requiring mul…

Metric and Geometric Spanners that are Resilient to Degree-Bounded Edge Faults
Ahmad Biniaz, Jean-Lou De Carufel, Anil Maheshwari, Michiel Smid
https://arxiv.org/abs/2405.18134

Metric and Geometric Spanners that are Resilient to Degree-Bounded Edge Faults
Let $H$ be an edge-weighted graph, and let $G$ be a subgraph of $H$. We say that $G$ is an $f$-fault-tolerant $t$-spanner for $H$, if the following is true for any subset $F$ of at most $f$ edges of $G$: For any two vertices $p$ and $q$, the shortest-path distance between $p$ and $q$ in the graph $G \setminus F$ is at most $t$ times the shortest-path distance between $p$ and $q$ in the graph $H \setminus F$. Recently, Bodwin, Haeupler, and Parter generalized this notion to the case when $F$ c…

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
Oliver Steuer, Michail Michailow, Ren\'e H\"ubner, Krzysztof Pyszniak, Marcin Turek, Ulrich Kentsch, Fabian Ganss, Muhammad Moazzam Khan, Lars Rebohle, Shengqiang Zhou, Joachim Knoch, Manfred Helm, Gianaurelio Cuniberti, Yordan M. Georgiev, Slawomir Prucnal
https:/…

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band gap and strain engineering and can improve the carrier mobilities, which makes Si1-x-yGeySnx alloys …

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
Oliver Steuer, Michail Michailow, Ren\'e H\"ubner, Krzysztof Pyszniak, Marcin Turek, Ulrich Kentsch, Fabian Ganss, Muhammad Moazzam Khan, Lars Rebohle, Shengqiang Zhou, Joachim Knoch, Manfred Helm, Gianaurelio Cuniberti, Yordan M. Georgiev, Slawomir Prucnal
https:/…

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band gap and strain engineering and can improve the carrier mobilities, which makes Si1-x-yGeySnx alloys …