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Tunnel junctions based on interfacial 2D ferroelectrics
Yunze Gao, Astrid Weston, Vladimir Enaldiev, Eli Castanon, Wendong Wang, James E. Nunn, Amy Carl, Hugo De Latour, Xiao Li, Alex Summerfield, Andrey Kretinin, Nicholas Clark, Neil Wilson, Vladimir I. Falko, Roman Gorbachev
https://arxiv.org/abs/2403.09399

Tunnel junctions based on interfacial 2D ferroelectrics
Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain mapping and tunne…