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Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation
K. Vishwakarma, K. Lee, A. Kruv, A. Chasin, M. J. van Setten, C. Pashartis, O. O. Okudur, M. Gonzalez, N. Rassoul, A. Belmonte, B. Kaczer
https://arxiv.org/abs/2506.15193

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation
This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demonstrated that MS induces a positive Vth shift in the device transfer characteristics and enhances electron trapping during Positive Bias Temperature Instability (PBTI) tests. These effects are attributed to the widening of the IGZO bandgap (EG) and increased accessibility of carriers to AlOX gate oxide trap levels. As …

2-dimensional TFTs via modular $\infty$-operads
Jan Steinebrunner
https://arxiv.org/abs/2506.22104 https://arxiv.org/pdf/2506.22104…

2-dimensional TFTs via modular $\infty$-operads
This lecture series is based on joint work in progress with Shaul Barkan, as well as work in progress of the author. The five sections of these notes correspond to the five lectures, but more details have been added. $2$-dimensional topological field theories ($2$D TFTs) valued in vector spaces are commutative Frobenius algebras. The goal of this lecture series is to generalize from the $1$-category of vector spaces to any symmetric monoidal $\infty$-category $\mathcal{C}$, i.e. to study symm…

Demonstration of TFTs 3D Monolithically Integrated on GaN HEMTs using Cascode Configuration with High Breakdown Voltage (>1900V)
Tian-Li Wu, Hsin-Jou Ho, Chia-Wei Liu, Yi-Chen Chen
https://arxiv.org/abs/2507.07512

Demonstration of TFTs 3D Monolithically Integrated on GaN HEMTs using Cascode Configuration with High Breakdown Voltage (>1900V)
This study demonstrates 3D monolithic integration of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) on Gallium Nitride (GaN) high electron mobility transistors (HEMTs) in a cascode configuration, achieving high breakdown voltage capabilities exceeding 1900 V. Two device configurations, differing in a-IGZO channel thickness (30 nm / 10 nm), are fabricated and evaluated. Sample B, with a 10 nm a-IGZO channel, demonstrates superior electrical performance, including a hig…

Efficacy of Temporal Fusion Transformers for Runoff Simulation
Sinan Rasiya Koya, Tirthankar Roy
https://arxiv.org/abs/2506.20831 https://

Efficacy of Temporal Fusion Transformers for Runoff Simulation
Combining attention with recurrence has shown to be valuable in sequence modeling, including hydrological predictions. Here, we explore the strength of Temporal Fusion Transformers (TFTs) over Long Short-Term Memory (LSTM) networks in rainfall-runoff modeling. We train ten randomly initialized models, TFT and LSTM, for 531 CAMELS catchments in the US. We repeat the experiment with five subsets of the Caravan dataset, each representing catchments in the US, Australia, Brazil, Great Britain, and …