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Graphene Heterostructure-Based Non-Volatile Memory Devices with Top Floating Gate Programming
Gabriel L. Rodrigues, Ana B. Yoshida, Guilherme S. Selmi, Nickolas T. K. B de Jesus, Igor Ricardo, Kenji Watanabe, Takashi Taniguchi, Rafael F. de Oliveira, Victor Lopez-Richard, Alisson R. Cadore
https://arxiv.org/abs/2507.07897…

Graphene Heterostructure-Based Non-Volatile Memory Devices with Top Floating Gate Programming
We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal boron nitride (hBN)-graphene channel, the device functions simultaneously as a top gate, floating gate (FG) reservoir, and active reset contact. This architecture forms an ultrathin van der Waals heterostructure with strong capacitive coupling to the back-gate, confirmed by a dynamic model, enabling a tunable and wide…