Tootfinder

Enhancing the Plasmonic Hotspot Density via Structural Engineering of Multi-layered MoO3-Ag-Au Systems Under Extreme Electronic Excitation Conditions for Ultra-Sensitive SERS Applications
Om Prakash, Sharmistha Dey, Mayur Khan, Abhijith T, Udai Bhan Singh, Ambuj Tripathi, Santanu Ghosh
https://arxiv.org/abs/2510.11470

Enhancing the Plasmonic Hotspot Density via Structural Engineering of Multi-layered MoO3-Ag-Au Systems Under Extreme Electronic Excitation Conditions for Ultra-Sensitive SERS Applications
We illustrate ion-beam engineering of MoO3 Ag Au multilayer plasmonic substrates to improve SERS performance, We illustrate ion-beam engineering of MoO3-Ag-Au multilayer plasmonic substrates to improve SERS performance. Orthorhombic α-MoO3 microflakes were produced via chemical vapour deposition (CVD) on Si-SiO2 substrates. Thin films of Ag (5 nm) and Au (5 nm) were thermally evaporated onto the MoO3 flakes, and the samples were subjected to 100 MeV Ag8+ swift heavy ion irradiation at fluences…

Atomic-Scale Origins of Oxidation Resistance in Amorphous Boron Nitride
Onurcan Kaya (Catalan Institute of Nanoscience and Nanotechnology, Department of Electronic Engineering, Universitat Aut\`onoma de Barcelona), Qiushi Deng (School of Engineering, The Australian National University, Canberra, Australia), Thomas Souvignet (Universit\'e Claude Bernard Lyon 1, CNRS, LMI UMR 5615, Villeurbanne, France), Catherine Marichy (Universit\'e Claude Bernard Lyon 1, CNRS, LMI UMR 5615, V…

Atomic-Scale Origins of Oxidation Resistance in Amorphous Boron Nitride
Amorphous boron nitride (\textrm{$α$}-BN) is a promising ultrathin barrier for nanoelectronics, yet the atomistic mechanisms governing its chemical stability remain poorly understood. Here, we investigate the structure-property relationship that dictates the oxidation of \textrm{$α$}-BN using a combination of machine-learning molecular dynamics simulations and angle-resolved X-ray photoelectron spectroscopy. The simulations reveal that the film structure, controlled by synthesis conditions, i…

Casimir Stabilization of Fluctuating Electronic Nematic Order
Ola Carlsson, Sambuddha Chattopadhyay, Jonathan B. Curtis, Frieder Lindel, Lorenzo Graziotto, J\'er\^ome Faist, Eugene Demler
https://arxiv.org/abs/2510.05088

Casimir Stabilization of Fluctuating Electronic Nematic Order
Vacuum cavity control of quantum materials is the engineering of quantum materials systems through electromagnetic zero-point fluctuations. In this work we articulate a generic mechanism for vacuum optical control of correlated electronic order: Casimir control, where the zero-point energy of the electromagnetic continuum, the Casimir energy, depends on the properties of the material system. To assess the experimental viability of this mechanism we focus on the Casimir stabilization of fluctuat…

Band Gap Engineering of Nitrogen-Doped Monolayer WSe$_2$ Superlattice and its application to Field Effect Transistor
Yi-Cheng Lo, Liao Jia Wang, Yu-Chang Chen
https://arxiv.org/abs/2510.01917

Band Gap Engineering of Nitrogen-Doped Monolayer WSe$_2$ Superlattice and its application to Field Effect Transistor
We systematically investigate the electronic structures of pristine monolayer WSe$_2$ and WSe$_2$ superlattices with periodic nitrogen substitution. Unlike random doping, which often introduces in-gap impurity states, periodic nitrogen doping primarily modulates the band gap, thereby facilitating effective band gap engineering for electronic and optoelectronic applications. The gap narrows monotonically with increasing dopant density (pristine $>$ 8-row $>$ 6-row $>$ 4-row), directly influencin…

Nonlocal Electrostatics and Boundary Charges in Continuum Limits of Two-Dimensional Materials
Shoham Sen, Yang Wang, Timothy Breitzman, Kaushik Dayal
https://arxiv.org/abs/2509.17744

Nonlocal Electrostatics and Boundary Charges in Continuum Limits of Two-Dimensional Materials
Two-dimensional (2D) electronic materials are of significant technological interest due to their exceptional properties and broad applicability in engineering. The transition from nanoscale physics, that dictates their stable configurations, to macroscopic engineering applications requires the use of multiscale methods to systematically capture their electronic properties at larger scales. A key challenge in coarse-graining is the rapid and near-periodic variation of the charge density, which e…

Rare-Earth Engineering of NaAlO3 Perovskites Unlocks Unified Optoelectronic, Thermoelectric, and Spintronic Functionalities
Muhammad Imran, Sikander Azam, Qaiser Rafiq, Amin Ur Rahman
https://arxiv.org/abs/2510.08130

Rare-Earth Engineering of NaAlO3 Perovskites Unlocks Unified Optoelectronic, Thermoelectric, and Spintronic Functionalities
Perovskite oxides are promising for energy and quantum technologies, but wide-gap hosts such as NaAlO3 suffer from deep-UV absorption and limited carrier transport. Using first-principles GGA+U+SOC calculations, we investigate Eu3+-, Gd3+-, and Tb3+-doped NaAlO3 and evaluate their electronic, optical, elastic, and thermoelectric properties. Rare-earth substitution is thermodynamically favorable (formation energies 1.2-1.6 eV) and induces strong f-p hybridization, reducing the pristine band gap …

Thermoelectric Enhancement via Electronic and Phononic Channels in Staggered and Non-Staggered Dimerized Quantum Ring
Ranjini Bhattacharya, Souvik Roy
https://arxiv.org/abs/2510.00571

Thermoelectric Enhancement via Electronic and Phononic Channels in Staggered and Non-Staggered Dimerized Quantum Ring
Harnessing the quantum coherence and tunability of molecular-scale structures, we theoretically explore thermoelectric transport in ring-shaped molecular junctions featuring dimerized hopping integrals. By engineering alternating strong and weak bonds in both staggered and non-staggered configurations, we reveal a marked transmission asymmetry that drives a substantial enhancement in the thermoelectric figure of merit, ZT. To further steer transport behavior, we introduce controlled aperiodicit…

Unraveling the role of disorder in the electronic structure of high entropy alloys
Neeraj Bhatt, Deepali Sharma, Asif Ali, Kapil Motla, Sonika Jangid, Ravi Prakash Singh, Ravi Shankar Singh
https://arxiv.org/abs/2509.22809

Unraveling the role of disorder in the electronic structure of high entropy alloys
Disorder in high entropy alloys, arising from the random distribution of multiple elements, plays a crucial role in their novel properties desirable for various advanced engineering applications. We investigate the role of compositional and structural disorder on the electronic structure of osmium-based superconducting high entropy alloys, (Ru/Re)$_{0.35}$Os$_{0.35}$Mo$_{0.10}$W$_{0.10}$Zr$_{0.10}$, using photoemission spectroscopy and density functional theory (DFT). Elemental and cumulative c…

Direct observation of band structure modifications from monolayer WSe2 to Janus WSSe
Masato Sakano, Shunsuke Akatsuka, Takato Yamamoto, Tianyishan Sun, Dingkun Bi, Hiroto Ogura, Naoya Yamaguchi, Fumiyuki Ishii, Natsuki Mitsuishi, Kenji Watanabe, Takashi Taniguchi, Miho Kitamura, Koji Horiba, Kenichi Ozawa, Katsuaki Sugawara, Seigo Souma, Takafumi Sato, Yuta Seo, Satoru Masubuchi, Tomoki Machida, Toshiaki Kato, Kyoko Ishizaka

Direct observation of band structure modifications from monolayer WSe2 to Janus WSSe
Janus monolayer transition metal dichalcogenides (TMDs), created by post-growth substitution of the top chalcogen layer, represent a new direction for engineering 2D crystal properties. However, their rapid ambient degradation and the difficulty of obtaining large-area monolayer samples have limited the available experimental probes, leaving their detailed electronic structure near the Fermi level largely unexplored. In this work, by performing micro-focused angle-resolved photoemission spectro…

MIM-Diode-Like Rectification in Lateral 1T/1H/1T-MoS$_2$ Homojunctions via Interfacial Dipole Engineering
Elias Eckmann, Ersoy \c{S}a\c{s}{\i}o\u{g}lu, Nicki F. Hinsche, Ingrid Mertig
https://arxiv.org/abs/2509.17947

MIM-Diode-Like Rectification in Lateral 1T/1H/1T-MoS$_2$ Homojunctions via Interfacial Dipole Engineering
Lateral two-dimensional (2D) tunnel diodes that reproduce metal-insulator-metal (MIM)-diode-like rectification without using dissimilar contacts are attractive for scalable nanoelectronics. MoS$_2$ can exist in both the semiconducting 1H phase and the metallic 1T phase, enabling phase-engineered homojunctions within a single material. First-principles electronic structure and quantum transport calculations show that phase-engineered 1T/1H/1T--MoS$_2$ homojunctions exhibit pronounced MIM-diode-l…

Giant optical anisotropy in CrSBr from giant exciton oscillator strength
Georgy Ermolaev, Tagir Mazitov, Arslan Mazitov, Adilet Toksumakov, Dmitriy Grudinin, Anton Minnekhanov, Gleb Tselikov, Dmitry Yakubovsky, Gleb Tikhonowski, Nikolay Pak, Umer Ahsan, Aleksandr Slavich, Mikhail Mironov, Alexey Tsapenko, Andrey Vyshnevyy, Ivan Kruglov, Zdenek Sofer, Aleksey Arsenin, Kostya Novoselov, Andrey Katanin, Valentyn Volkov

Spin-polarised surface fermiology of ohmic WSe$_2$/NbSe$_2$ interfaces
Oliver J. Clark, Thi-Hai-Yen Vu, Ben A. Chambers, Federico Mazzola, Sadhana Sridhar, Geetha Balakrishnan, Aaron Bostwick, Chris Jozwiak, Eli Rotenberg, Sarah L. Harmer, Michael S. Fuhrer, Mark T. Edmonds
https://arxiv.org/abs/2509.14937

Spin-polarised surface fermiology of ohmic WSe$_2$/NbSe$_2$ interfaces
Discovering and engineering spin-polarised surface states in the electronic structures of condensed matter systems is a crucial first step in development of spintronic devices, wherein spin-polarised bands crossing the Fermi level can facilitate information transfer. Here, we show how the spin-orbit split K-point valleys of monolayer WSe$_2$ can be made potentially suitable for this purpose, despite the semiconducting ground state. By interfacing with metallic 2H-NbSe$_2$, these valence band ex…