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Valtioneuvoston ilmastovuosikertomus 2025 #Ilmasto

NOTICE OF PUBLIC FORUM
(Public Participation Hearing)
Southern California Edison Company and San Diego Gas and Electric Company’s
Joint Application for the 2024 Nuclear Decommissioning Cost Triennial Proceeding
APPLICATION A.24-12-003
Southern California Edison Company (SCE), San Diego Gas & Electric Company (SDG&E), and the California Public Utilities Commission (CPUC) would like to hear from you. You are invited to participate in a Public Forum, also calle…

Tote in Odessa gemeldet
Bei einem Angriff auf die ukrainische Hafenstadt Odessa sind nach Behördenangaben mindestens zwei Menschen getötet und sechs weitere Bewohner verletzt worden. Unter den Verletzten seien zwei Kinder im Alter von sieben und vier Jahren, teilte Militärverwalter Oleh Kiper auf der Plattform Telegram mit. Eine Drohne schlug in den oberen Etagen eines 21-stöckigen Wohnhauses ein un…
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Weißt du, woher unser Show-Intro wirklich kommt? 👀
Lindworm lüftet das Geheimnis – und gibt exklusive Einblicke hinter die Kulissen von Traitor 🖤
👉 Jetzt die neue Folge von The Darkk Show auf YouTube schauen!
📺 https://youtu.be/EtHkNHh4osc

White dwarf structure in $f(R,T,L_m)$ gravity: beyond the Chandrasekhar mass limit
Edson Otoniel, Juan M. Z. Pretel, Cl\'esio E. Mota, C\'esar O. V. Flores, Victor B. T. Alves
https://arxiv.org/abs/2507.18745

White dwarf structure in $f(R,T,L_m)$ gravity: beyond the Chandrasekhar mass limit
In this work, we investigate the relativistic structure of white dwarfs (WDs) within the framework of modified gravity theory $f(R, T, L_m) = R + αT L_m$, which introduces a non-minimal coupling between matter and curvature. Using a realistic equation of state (EoS) that includes contributions from a relativistic degenerate electron gas and ionic lattice effects, we solve the modified Tolman-Oppenheimer-Volkoff (TOV) equations for two standard choices of the matter Lagrangian density: $L_m = p…

Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas
Mete M. Bayrak, Anthony J. Ardizzi, Sadhvikas Addamane, Kieran Cleary, Austin J. Minnich
https://arxiv.org/abs/2506.19749

Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas
The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer. Atomic layer etching (ALE) has the potential to overcome this challenge because of its ability to etch with Angstrom-scale precision, low damage, and intrinsic wafer-scale uniformity. Here, we report an ALE process for InGaAs based on sequential atomic hydrogen and oxygen gas exposures. An etch rate of 0.095 Å/cycl…

"Israel is in clear violation of Article 2(4) of the UN Charter. When Russia invaded Ukraine — an action this paper condemned at the time — the EU, Britain and the US invoked Ukraine’s right to defend itself under Article 51, but those same Western governments are now bizarrely offering Article 51 to the aggressor Israel, instead of Iran."
Trump’s alarming G7 exit signals an unstable leader edging towards war with Iran | Morning Star

Dear old Violet.
She'll be turning 13 in October, so she's kind of on borrowed time for a greyhound. She seems to have lost most of her vision now and is underweight, though her appetite is still huge and she still loves her walks.
She was once a terror for the local cats and squirrels but now if they remain still she doesn't spot them. She still sniffs every place that she remembers them to have been.

LPCVD based Plasma Damage Free in situ etching of $\beta$-Ga$_2$O$_3$ using Solid Source Gallium
Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan
https://arxiv.org/abs/2506.17855

LPCVD based Plasma Damage Free in situ etching of $β$-Ga$_2$O$_3$ using Solid Source Gallium
This work demonstrates a novel in situ etching technique for $β$-Ga$_2$O$_3$ using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etching. Etching behavior was systematically studied on (-201) $β$-Ga$_2$O$_3$ films and patterned (010) $β$-Ga$_2$O$_3$ substrates as a function of temperature, Ar carrier gas flow, and Ga source-to-substrate distance. The process exhibits vapor transport- and surface-reaction-limited behavior, with etch rates reaching…

Kansalaisaloite Suomen vesien puhtauden puolesta luovutettiin eduskunnalle https://www.eduskunta.fi/FI/tiedotteet/Sivut/Kansalaisaloite-Suomen-vesien-puhtauden-puolesta-luovutettiin-eduskunnalle.aspx…