Tootfinder

3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography
Shake Karapetyan, Steven E. Zeltmann, Glen Wilk, Ta-Kun Chen, Vincent D. -H. Hou, David A. Muller
https://arxiv.org/abs/2507.07265

3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography
To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and resolve performance-limiting fabrication challenges. X-ray methods deliver three-dimensional imaging of integrated circuits but lack the spatial resolution to characterize atomic-scale features, while conventional electron microscopy offers atomic-scale imagin…