Tootfinder

On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films
Piotr Kruszewski, Jose Coutinho, Vladimir P. Markevich, Pawel Prystawko, Lijie Sun, Jerzy Plesiewicz, Chris A. Dawe, Matthew P. Halsall, Anthony R. Peaker
https://arxiv.org/abs/2506.10566

On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films
The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grown by metal-organic vapor phase epitaxy (MOVPE) on Ammono-GaN substrates, are presented. It is shown that the electron emission signals associated with the E1 donor and the FeGa acceptor levels split into individual components due to the aluminium fluctuations in the nearest neighbour shells around the E1 and FeGa defe…

Warm Vapor Rydberg EIT spectra in Doppler-free configurations
Jeremy Glick, Brielle E. Anderson, T. Nathan Nunley, Josiah Bingaman, Jian Jun Liu, David H. Meyer, Paul D. Kunz
https://arxiv.org/abs/2506.04504