Tootfinder

Almost 150 Ukrainian miners trapped underground after Russian attack in Donetsk Oblast: https://benborges.xyz/2025/08/26/almost-ukrainian-miners-trapped-underground.html

The woman who could impede RFK Jr.’s anti-vaccine agenda
The public would be better-off with a serious person such as Susan Monarez at the CDC’s helm.

The Senate should confirm her, and fast.
Monarez, meanwhile, needs to recognize the burden she is accepting.
Being CDC director is not an easy job, even in less contentious times.
Having to report to Kennedy makes it incalculably harder.
Lives will depend on whether Monarez resists Kennedy’s efforts to …

The woman who could impede RFK Jr.’s anti-vaccine agenda
Susan Monarez deserves to be confirmed as CDC director.

📞 Teenagers no longer answer the phone: Is it a lack of manners or a new trend?
#telephone

Teenagers no longer answer the phone: Is it a lack of manners or a new trend?
Teenagers can seem to have their phones glued to their hands—yet they won't answer them when they ring. This scenario, which is all too familiar to many parents, can seem absurd and frustrating, or even alarming to some.

saddest & depressing thing to read :
The missing part – Sexual exploitation of minors in French-speaking Belgium: the great blindness
Read More https://sinfo-project.eu/winning-story/the-missing-p…

MemLens: Uncovering Memorization in LLMs with Activation Trajectories
Zirui He, Haiyan Zhao, Ali Payani, Mengnan du
https://arxiv.org/abs/2509.20909 https://

MemLens: Uncovering Memorization in LLMs with Activation Trajectories
Large language models (LLMs) are commonly evaluated on challenging benchmarks such as AIME and Math500, which are susceptible to contamination and risk of being memorized. Existing detection methods, which primarily rely on surface-level lexical overlap and perplexity, demonstrate low generalization and degrade significantly when encountering implicitly contaminated data. In this paper, we propose MemLens (An Activation Lens for Memorization Detection) to detect memorization by analyzing the pr…

Antiferromagnetic Hall-Memristors
Gaspar De la Barrera, Alvaro S. Nunez
https://arxiv.org/abs/2507.18388 https://arxiv.org/pdf/2507.18388

Antiferromagnetic Hall-Memristors
Spin-memristors are a class of materials that can store memories through the control of spins, potentially leading to novel technologies that address the constraints of standard silicon electronics, thereby facilitating the advancement of more intelligent and energy-efficient computing systems. In this work, we present a spin-memristor based on antiferromagnetic materials that exhibit Hall-memresistance. Moreover, the nonlinear Edelstein effect acts as both a writer and eraser of memory registe…

Memory-QA: Answering Recall Questions Based on Multimodal Memories
Hongda Jiang, Xinyuan Zhang, Siddhant Garg, Rishab Arora, Shiun-Zu Kuo, Jiayang Xu, Christopher Brossman, Yue Liu, Aaron Colak, Ahmed Aly, Anuj Kumar, Xin Luna Dong
https://arxiv.org/abs/2509.18436

Memory-QA: Answering Recall Questions Based on Multimodal Memories
We introduce Memory-QA, a novel real-world task that involves answering recall questions about visual content from previously stored multimodal memories. This task poses unique challenges, including the creation of task-oriented memories, the effective utilization of temporal and location information within memories, and the ability to draw upon multiple memories to answer a recall question. To address these challenges, we propose a comprehensive pipeline, Pensieve, integrating memory-specific …

A General Molecular-Scale Dynamic Memristor Model Based on Non-equilibrium Charge Transport Kinetics and Its Information Processing Capability in Reservoir Computing
Yueqi Chen, Xuan Ji, Xi Yu
https://arxiv.org/abs/2508.18014

A General Molecular-Scale Dynamic Memristor Model Based on Non-equilibrium Charge Transport Kinetics and Its Information Processing Capability in Reservoir Computing
Non-equilibrium molecular-scale dynamics, where fast electron transport couples with slow chemical state evolution, underpins the complex behaviors of molecular memristors, yet a general model linking these dynamics to neuromorphic computing remains elusive. We introduce a dynamic memristor model that integrates Landauer and Marcus electron transport theories with the kinetics of slow processes, such as proton/ion migration or conformational changes. This framework reproduces experimental condu…

A follow-up on the sulphur atom popping model for MoS$_2$ memristor
Sanchali Mitra, Santanu Mahapatra
https://arxiv.org/abs/2509.20179 https://arxiv.org/pd…

A follow-up on the sulphur atom popping model for MoS$_2$ memristor
The mechanism of resistive switching in two-dimensional (2D) semiconductor-based memristors is intriguing, and our conventional knowledge of bulk-oxide based memristors does not apply to these devices. Experimental data indicate that the genesis of resistive switching may be intrinsic to the 2D semiconducting active layer, as well as resulting from the movement of electrode atoms. Employing reactive-force field (ReaxFF) molecular dynamics simulations, we introduced the "sulphur atom popping mod…