Tootfinder

Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs
Jishnu Ghosh, Shubham Parate, Arup Basak, Binoy Krishna De, Krishnendu Mukhopadhyay, Abhinav Agarwal, Gopesh Kumar Gupta, Digbijoy Nath, Pavan Nukala
https://arxiv.org/abs/2509.09233

Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlayer sliding, and structural polymorphism. Ferroelectric semiconductor field-effect transistors (FeS-FETs) provide an ideal architecture to harness this coupling. Here, we demonstrate gate-tunable negative differential resistance (NDR) with high peak-to-valley ratios and hysteretic output conductance in In2Se3 FeS-FETs.…

Beam test results of the Intermediate Silicon Tracker for sPHENIX
C. W. Shih, G. Nukazuka, Y. Sugiyama, Y. Akiba, H. En'yo, T. Hachiya, S. Hasegawa, M. Hata, H. Imai, C. M. Kuo, M. Morita, I. Nakagawa, Y. Nakamura, G. Nakano, Y. Namimoto, R. Nouicer, M. Shibata, M. Shimomura, R. Takahama, K. Toho, M. Tsuruta, M. Watanabe
https://arxiv.…

Beam test results of the Intermediate Silicon Tracker for sPHENIX
The Intermediate Silicon Tracker (INTT), a two-layer barrel silicon strip tracker, is a key component of the tracking system for sPHENIX at the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory. The INTT is designed to enable the association of reconstructed tracks with individual RHIC bunch crossings. To evaluate the performance of preproduction INTT ladders and the readout chain, a beam test was conducted at the Research Center for Accelerator and Radioisotope Science, …

Non-Ferroelectric to Ferroelectric Phase Transition in epitaxial Y:HfO$_2$ via Rapid Thermal Annealing Induced Nitrogen Doping
Soumyajyoti Mondal, Asraful Haque, Binoy Krishna De, Shubham Kumar Parate, Pramod Kumar Yadav, Arup Basak, Kaushal Tiwari, Bhagwati Prasad, Pavan Nukala
https://arxiv.org/abs/2509.02229

Non-Ferroelectric to Ferroelectric Phase Transition in epitaxial Y:HfO$_2$ via Rapid Thermal Annealing Induced Nitrogen Doping
Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO$_2$, with cationic doping widely employed to introduce such defects. In contrast, systematic studies on anionic doping to induce ferroelectricity remain largely in nascent stages. On epitaxial Y:HfO$_2$ grown on ITO buffered YSZ substrates that crystallize in a mixed monoclinic (non-polar) and orthorhombic (polar) phases, we introduce nitrogen doping via post deposition rapid thermal annealing (RTA)…