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Vibrational properties of epitaxial graphene buffer layer on silicon carbide
Guillaume Radtke (IMPMC), Michele Lazzeri (IMPMC)
https://arxiv.org/abs/2506.16166

Vibrational properties of epitaxial graphene buffer layer on silicon carbide
The vibrational properties of semiconducting graphene buffer layer epitaxially grown on hexagonal silicon carbide are determined using first-principles calculations on a realistic structural model. Despite the important chemical and structural disorder associated with the partial covalent bonding with the substrate, the buffer-layer carbon atoms still display quasidispersive phonons mimicking those of graphene. The related frequency softening and broadening provide a natural interpretation of t…