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Large-scale characterization of Single-Hole Transistors in 22-nm FDSOI CMOS Technology
Thomas H. Swift, Alberto Gomez-Saiz, Virginia N. Ciriano-Tejel, David F. Wise, Grayson M. Noah, John J. L. Morton, M. Fernando Gonzalez-Zalba, Mark A. I. Johnson
https://arxiv.org/abs/2507.21306

Large-scale characterization of Single-Hole Transistors in 22-nm FDSOI CMOS Technology
State-of-the-art quantum processors have recently grown to reach 100s of physical qubits. As the number of qubits continues to grow, new challenges associated with scaling arise, such as device variability reduction and integration with cryogenic electronics for I/O management. Spin qubits in silicon quantum dots provide a platform where these problems may be mitigated, having demonstrated high control and readout fidelities and compatibility with large-scale manufacturing techniques of the sem…