Tootfinder

Boundary behavior of analytic functions on certain Banach spaces
Hector N. Salas
https://arxiv.org/abs/2510.10373 https://arxiv.org/pdf/2510.10373

Boundary behavior of analytic functions on certain Banach spaces
For Banach spaces of analytic functions on the disc for which the polynomials are dense and their pointt evaluations continuous, we prove the following: If they contain a function such that the limit superior of its modulus is infinite almost everywhere on the unit circle, then the same is true for a residual set of functions.

The 3D index and Dehn filling
Daniele Celoria, Craig D. Hodgson, J. Hyam Rubinstein
https://arxiv.org/abs/2509.09886 https://arxiv.org/pdf/2509.09886

The 3D index and Dehn filling
We provide a rigorous proof of the Gang-Yonekura formula describing the transformation of the 3D index under Dehn filling a cusp in an orientable 3-manifold. The 3D index, originally introduced by Dimofte, Gaiotto and Gukov, is a physically inspired q-series that encodes deep topological and geometric information about cusped 3-manifolds. Building on the interpretation of the 3D index as a generating function over Q-normal surfaces, we introduce a relative version of the index for ideal triangu…

Growth control of highly textured Bi2Te3 thin films by pulsed laser deposition
Damian Brzozowski, Yu Liu, Karola Neeleman, Magnus Nord, Ingrid G. Hallsteinsen
https://arxiv.org/abs/2510.10479

Growth control of highly textured Bi2Te3 thin films by pulsed laser deposition
Two-dimensional materials have attracted growing interest due to their unique electronic properties and potential applications in spintronics. Interfacing strongly spin-orbit-coupled chalcogenides with functional oxides such as perovskites has a particularly high potential. In this work, highly textured Bi2Te3 thin films were deposited on (111) oriented SrTiO3 by pulsed laser deposition. We show that, by careful selection of the temperature and pressure of growth, the film's stoichiometry can b…

Neural network-based singularity detection and applications
Nadiia Derevianko, Ioannis G. Kevrekidis, Felix Dietrich
https://arxiv.org/abs/2509.10110 https://

Neural network-based singularity detection and applications
We present a method for constructing a special type of shallow neural network that learns univariate meromorphic functions with pole-type singularities. Our method is based on using a finite set of Laurent coefficients as input information, which we compute by FFT, employing values of the investigated function on some contour $Γ$ in the complex plane. The primary components of our methodology are the following: (1) the adaptive construction of rational polynomial activation functions, (2) a no…

Manipulating the metal-insulator transitions in correlated vanadium dioxide through bandwidth and band-filling control
Xiaohui Yao, Jiahui Ji, Xuanchi Zhou
https://arxiv.org/abs/2510.10183

Manipulating the metal-insulator transitions in correlated vanadium dioxide through bandwidth and band-filling control
The metal-insulator transition (MIT) in correlated oxide systems opens up a new paradigm to trigger the abruption in multiple physical functionalities, enabling the possibility in unlocking exotic quantum states beyond conventional phase diagram. Nevertheless, the critical challenge for practical device implementation lies in achieving the precise control over the MIT behavior of correlated system across a broad temperature range, ensuring the operational adaptability in diverse environments. H…

Perhaps worth noting usxports, past references, if the same function, appear to have been under .mil names
https://mastodon.social/@botgov/115191994244102322

Work Function Mapping Across a-In2Se3 to {\alpha}-In2Se3 to {\gamma}-InSe in RF-Sputtered Thin Films
Marius O. Eji, Md. Sakauat Hasan Sakib, Joseph P. Corbett
https://arxiv.org/abs/2510.08767

Work Function Mapping Across a-In2Se3 to α-In2Se3 to γ-InSe in RF-Sputtered Thin Films
Indium selenide is a phase-change chalcogenide whose polymorphism enables a variety of physical properties to be tuned. Here we directly quantify the evolution of the surface work function across the amorphous-to-crystalline transition in RF-sputtered In2Se3 thin films grown on c-plane Al2O3 (001). By varying deposition temperature (100-500 °C) and film thickness, we establish processing windows for a- In2Se3, α-In2Se3, and γ-InSe, and correlate structure with electronic and morphological pr…